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Thick Aluminum Nitride Substrate for RTP Furnace's Sample Holder - EQ-AIN-Holder
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Product Options
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Such unpolished Aluminum Nitride can be placed in the center of holder for holding test
samples up to 3" or 5" diam. The excellent temperature uniformity can be achieved in this 3" or 5"
diam. area due to the benefit from its high thermal conductivity.
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Aluminum Nitride Ceramic Substrates Properties
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Item No.
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AIN-Holder
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Purity (wt%)
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99% (AN5116)
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Density (g/cm3)
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>3.26
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Thermal Conductivity (W/m. K)
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>170
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Thermal Expansion (x10-6/oC)
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<4.2
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Dielectric Strength (Kv/mm)
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>15
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Dielectric Constant (at 1MHZ)
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8.7
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Loss Tangent (x104@1 MHz)
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3 - 7
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Volume Resistivity (ohm-cm)
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>1014
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Flexural Strength (Kgf/mm)
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>30
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Substrate Specifications
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3" or 5" diameter, 0.65mm thickness
surface: fine ground
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Product Configuration
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The unpolished AIN in the center of holder is able to hold test samples up to 3" or 5" diam.
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